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Electrical Specifications
TC
=25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
VF
-
-
3.2
V
C--2.6V
IR
-
-
250
μA
C- - 1mT
A
trr
A/- - 6μ5ns
s
- - 8A/μ5 ns
s
ta
- 4A/μ8 - ns
s
tb
IF
=
30
A
IF
=30
A,TC
=150
o
VR
=
1200
V
VR
=
1200
V,
C
=150
o
IF
=1
A,
di
F/dt
=
100
IF
=30
100
A,di
F/dt
=
IF
=30
100
A,di
F/dt
=
IF
=30
100
A,di
F/dt
=
- 2A/μ2 - ns
s
RθJC
--1.2oC/W
DEFINITIONS
VF
= Instantaneous forward voltage (pw = 300μs, D = 2%).
IR
= Instantaneous reverse current.
Trr
=
Reverse
recovery
time
(See
Figure
6),
summation
of
ta
+tb.
ta
=
Time
to
reach
peak
reverse
current
(See
Figure
6).
tb
=Time
from
peak
IRM
to
projected
zero
crossing
of
IRM
basedonastraightlinefrompeakIRM
through
25%
of
IRM
(See
Figure
6).
RθJC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
200
100
10
1
0
I
F
, FORWARD CURRENT (A)
VF, FORWARD VOLTAGE (V)
175oC
100oC
25oC
0.5 1.0 1.5 2.0 2.5 3.0
3.5 4.0 4.5
500
100
10
1.0
0.1
0.01
0
I
R
, REVERSE CURRENT (
μ
A)
200 400 600 800 1000
VR, REVERSE VOLTAGE (V)
1200
0.001
175oC
100oC
25oC
RHRP30120
www.fairchildsemi.com
2
?2001
Fairchild
S
emiconductor Corporation
RHRP30120
Rev. C1
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